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BSO119N03S
OptiMOS(R)2 Power-Transistor
Features * Fast switching MOSFET for SMPS * Optimized technology for notebook DC/DC * Qualified according to JEDEC for target applications * N-channel * Logic level * Excellent gate charge x R DS(on) product (FOM) * Very low on-resistance R DS(on) * Avalanche rated * dv /dt rated
1
Product Summary V DS R DS(on),max ID 30 11.9 11 V m A
P-DSO-8
Type BSO119N03S
Package P-DSO-8
Ordering Code Q67042-S4211
Marking 119N3S
Maximum ratings, at T j=25 C, unless otherwise specified Parameter Symbol Conditions Value 10 secs Continuous drain current ID T A=25 C2) T A=70 C2) Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS dv /dt V GS P tot T j, T stg T A=25 C2) 2.5 T A=25 C3) I D=11 A, R GS=25 I D=11 A, V DS=20 V, di /dt =200 A/s, T j,max=150 C 11 9.1 44 58 6 20 1.56 -55 ... 150 55/150/56 mJ kV/s V W C steady state 9.0 7.2 A Unit
Rev. 1.11
page 1
2004-02-09
BSO119N03S
Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - soldering point Thermal resistance, junction - ambient R thJS minimal footprint, t p10 s minimal footprint, steady state 6 cm2 cooling area2), t p10 s 6 cm2 cooling area2), steady state Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=25 A V DS=30 V, V GS=0 V, T j=25 C V DS=30 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.5 V, I D=10 A V GS=10 V, I D=11 A Gate resistance Transconductance
1) 2)
Values typ. max.
Unit
-
-
35
K/W
R thJA
-
-
110
-
-
150
-
-
50
-
-
80
30 1.2 -
1.6 0.1
2 1
V
A
-
10 10 13 9.9 0.9 30
100 100 16.3 11.9 S nA m
RG g fs |V DS|>2|I D|R DS(on)max, I D=11 A
15
J-STD20 and JESD22
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air.
3)
See figure 3
Rev. 1.11
page 2
2004-02-09
BSO119N03S
Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics4) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Gate charge total, sync. FET Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage IS I S,pulse V SD T A=25 C V GS=0 V, I F=2.5 A, T j=25 C V R=12 V, I F=I S, di F/dt =400 A/s 0.75 2.5 44 1 V A Q gs Q g(th) Q gd Q sw Qg V plateau Q g(sync) Q oss V DS=0.1 V, V GS=0 to 5 V V DD=15 V, V GS=0 V V DD=15 V, I D=5.5 A, V GS=0 to 5 V 3.7 2.1 2.5 4.1 10 2.8 8.8 11 4.9 2.8 3.7 5.8 13 12 15 V nC nC C iss C oss C rss t d(on) tr t d(off) tf V DD=15 V, V GS=10 V, I D=5.5 A, R G=2.7 V GS=0 V, V DS=15 V, f =1 MHz 1300 470 62 4.3 3.8 18 2.8 1730 630 93 6.5 5.7 27 4.2 ns pF Values typ. max. Unit
Reverse recovery charge
Q rr
-
-
10
nC
4)
See figure 16 for gate charge parameter definition
Rev. 1.11
page 3
2004-02-09
BSO119N03S
1 Power dissipation P tot=f(T A); t p10 s 2 Drain current I D=f(T A); V GS10 V; t p10 s
3
12
2.5
10
2
8
P tot [W]
1.5
I D [A]
0 40 80 120 160
6
1
4
0.5
2
0
0 0 40 80 120 160
T A [C]
T A [C]
3 Safe operation area I D=f(V DS); T A=25 C ; D =0 parameter: t p
102
100
4 Max. transient thermal impedance Z thJS=f(t p) parameter: D =t p/T
102
10 s 0.5 100 s
100
1)
101
10
101
limited by on-state resistance 1 ms
10
0.2 0.1
Z thJS [K/W]
0.05 0.02
1
I D [A]
100
1
100
10 ms 10 s
0.01
10-1
0.1
10-1
DC
single pulse
0.1
10-2
0.01 0.1 1 10 100
10-2
2
0.01 0.00001 0.0001 0.001 0.01 0.1 1 10
10
-1
10
0
V DS [V]
10
1
10
10-5
10-4
10-3
t p [s]
10-2
10-1
100
101
Rev. 1.11
page 4
2004-02-09
BSO119N03S
5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS
20
10 V 4.5 V
6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS
30
25
3.3 V
15
3.4 V 3.2 V
3.6 V
20
3.1 V
3.8 V 4V
R DS(on) [m]
I D [A]
10
3V
15
4.2 V 4.5 V 5V
10 5
2.8 V
10 V
5
2.6 V
0 0 1 2 3
0 0 10 20 30
V DS [V]
I D [A]
7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j
40
8 Typ. forward transconductance g fs=f(I D); T j=25 C
60
50 30 40
20
g fs [S]
125 C 25 C
I D [A]
30
20 10 10
0 0 1 2 3 4
0 0 10 20 30
V GS [V]
I D [A]
Rev. 1.11
page 5
2004-02-09
BSO119N03S
9 Drain-source on-state resistance R DS(on)=f(T j); I D=11 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D
20 2.5
16
2
250 A
98 %
R DS(on) [m]
12
V GS(th) [V]
1.5
25 A
typ
8
1
4
0.5
0 -60 -20 20 60 100 140 180
0 -60 -20 20 60 100 140 180
T j [C]
T j [C]
11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz
12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j
104
10000
102
100
150 C
25 C
103
1000
Ciss Coss
101
150 C 98%
10
C [pF]
I F [A]
25 C 98%
10
2
100
Crss
10
0
1
101
10
10-1 10 20 30
0.1
0
0
0.2
0.4
0.6
0.8
1
1.2
V DS [V]
V SD [V]
Rev. 1.11
page 6
2004-02-09
BSO119N03S
13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start)
100
14 Typ. gate charge V GS=f(Q gate); I D=5.5 A pulsed parameter: V DD
12
10
6V
15 V
8
24 V
10
25 C
V GS [V]
1000
I AV [A]
6
125 C
100 C
4
2
1 1 10 100
0 0 5 10 15 20
t AV [s]
Q gate [nC]
15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA
16 Gate charge waveforms
36
V GS
34 32 30
Qg
V BR(DSS) [V]
28 26 24 22 20 -60 -20 20 60 100 140 180
V g s(th)
Q g (th) Q gs
Q sw Q gd
Q gate
T j [C]
Rev. 1.11
page 7
2004-02-09
BSO119N03S
Package Outline P-DSO-8: Outline
Footprint
Packaging Tape
Tube
Dimensions in mm Rev. 1.11 page 8 2004-02-09
BSO119N03S
Published by Infineon Technologies AG Bereich Kommunikation St.-Martin-Strae 53 D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts started herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.11
page 9
2004-02-09

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